NTE2919 NTE Electronics


nte2919.pdf
Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 92mΩ
Mounting: THT
Kind of channel: enhancement
Version: ESD
Pulsed drain current: -80A
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Technische Details NTE2919 NTE Electronics

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -20A, Power dissipation: 25W, Case: TO220F, Gate-source voltage: ±20V, On-state resistance: 92mΩ, Mounting: THT, Kind of channel: enhancement, Version: ESD, Pulsed drain current: -80A.