NTE2948 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 1A; Idm: 3A; 20W; TO251, Mounting: THT, Features of semiconductor devices: ESD protected gate, Case: TO251, Power dissipation: 20W, Polarisation: unipolar, Drain current: 1A, Kind of channel: enhanced, Drain-source voltage: 400V, Type of transistor: N-MOSFET, On-state resistance: 4.2Ω, Gate-source voltage: ±30V, Pulsed drain current: 3A, Anzahl je Verpackung: 1 Stücke.