NTE2956 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 64A; 38.5W; TO220F
Mounting: THT
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 38.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Case: TO220F
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 64A; 38.5W; TO220F
Mounting: THT
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 38.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 64A
Case: TO220F
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2956 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 64A; 38.5W; TO220F, Mounting: THT, Drain-source voltage: 500V, Drain current: 6.9A, On-state resistance: 0.31Ω, Type of transistor: N-MOSFET, Power dissipation: 38.5W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 64A, Case: TO220F, Anzahl je Verpackung: 1 Stücke.
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NTE2956 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 64A; 38.5W; TO220F Mounting: THT Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 38.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A Case: TO220F |
Produkt ist nicht verfügbar |