NTE2973 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET-N-CHAN ENHANCEMENT TO-3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.77 EUR |
| 10+ | 24.48 EUR |
| 20+ | 23.2 EUR |
| 50+ | 21.89 EUR |
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Technische Details NTE2973 NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT TO-3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V, Power Dissipation (Max): 275W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
Weitere Produktangebote NTE2973 nach Preis ab 15.59 EUR bis 71.5 EUR
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NTE2973 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 14A Pulsed drain current: 42A Power dissipation: 275W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2973 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 14A Pulsed drain current: 42A Power dissipation: 275W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE2973 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 900V 14A 3-Pin(3+Tab) TO-3P |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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