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NTE2973

NTE2973 NTE Electronics, Inc

nte2973.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT TO-3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.77 EUR
10+24.48 EUR
20+23.2 EUR
50+21.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTE2973 NTE Electronics, Inc

Description: MOSFET-N-CHAN ENHANCEMENT TO-3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V, Power Dissipation (Max): 275W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.

Weitere Produktangebote NTE2973 nach Preis ab 18.49 EUR bis 25.47 EUR

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NTE2973 Hersteller : NTE Electronics, Inc. nte2973.pdf Trans MOSFET N-CH 900V 14A 3-Pin(3+Tab) TO-3P
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+25.47 EUR
25+19.84 EUR
50+18.49 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH