Technische Details NTE299 NTE Electronics, Inc
Category: NPN THT transistors, Description: Transistor: NPN; bipolar; RF; 35V; 1A; 4W; TO202-3; Pout: 1.4W, Type of transistor: NPN, Polarisation: bipolar, Kind of transistor: RF, Collector-emitter voltage: 35V, Collector current: 1A, Power dissipation: 4W, Case: TO202-3, Current gain: 10...300, Mounting: THT, Output power: 1.4W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE299
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NTE299 | Hersteller : NTE Electronics |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; RF; 35V; 1A; 4W; TO202-3; Pout: 1.4W Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 35V Collector current: 1A Power dissipation: 4W Case: TO202-3 Current gain: 10...300 Mounting: THT Output power: 1.4W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE299 | Hersteller : NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 35V; 1A; 4W; TO202-3; Pout: 1.4W Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 35V Collector current: 1A Power dissipation: 4W Case: TO202-3 Current gain: 10...300 Mounting: THT Output power: 1.4W |
Produkt ist nicht verfügbar |