NTE2990 NTE Electronics

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -250V; -6A; Idm: -24A; 35W; TO220F, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -250V, Drain current: -6A, Pulsed drain current: -24A, Power dissipation: 35W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.55Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.