NTE2996 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Mounting: THT
Polarisation: unipolar
Power dissipation: 200W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 330A
Case: TO220
Drain-source voltage: 60V
Drain current: 59A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Mounting: THT
Polarisation: unipolar
Power dissipation: 200W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 330A
Case: TO220
Drain-source voltage: 60V
Drain current: 59A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.51 EUR |
15+ | 4.76 EUR |
25+ | 2.86 EUR |
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Technische Details NTE2996 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220, Mounting: THT, Polarisation: unipolar, Power dissipation: 200W, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 330A, Case: TO220, Drain-source voltage: 60V, Drain current: 59A, On-state resistance: 12mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2996 nach Preis ab 6.51 EUR bis 6.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTE2996 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220 Mounting: THT Polarisation: unipolar Power dissipation: 200W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 330A Case: TO220 Drain-source voltage: 60V Drain current: 59A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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