Technische Details NTE4979 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Semiconductor structure: bidirectional, Max. off-state voltage: 145V, Case: Ø9,52x5,21mm, Max. forward impulse current: 6.4A, Mounting: THT, Leakage current: 5µA, Peak pulse power dissipation: 1.5kW, Breakdown voltage: 170V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4979
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE4979 | Hersteller : NTE Electronics |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Max. off-state voltage: 145V Case: Ø9,52x5,21mm Max. forward impulse current: 6.4A Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Breakdown voltage: 170V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| NTE4979 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 170V; 6.4A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Max. off-state voltage: 145V Case: Ø9,52x5,21mm Max. forward impulse current: 6.4A Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Breakdown voltage: 170V |
Produkt ist nicht verfügbar |