NTE576-6 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 600V 5A DO201AD
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bag
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 3.26 EUR |
| 20+ | 3.1 EUR |
| 50+ | 2.92 EUR |
| 100+ | 2.85 EUR |
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Technische Details NTE576-6 NTE Electronics, Inc
Description: DIODE GEN PURP 600V 5A DO201AD, Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Bag, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 75pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io).
