NTE6113 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GP 600V 1625A DO200AB
Current - Reverse Leakage @ Vr: 30 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -30°C ~ 175°C
Supplier Device Package: DO-200AB
Current - Average Rectified (Io): 1625A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bag
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Technische Details NTE6113 NTE Electronics, Inc
Description: DIODE GP 600V 1625A DO200AB, Current - Reverse Leakage @ Vr: 30 mA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -30°C ~ 175°C, Supplier Device Package: DO-200AB, Current - Average Rectified (Io): 1625A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Clamp On, Package / Case: DO-200AB, B-PUK, Packaging: Bag.