NTE623 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: R-SI DUAL 200V 6A 150NS
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 2.39 EUR |
| 20+ | 2.27 EUR |
| 50+ | 2.15 EUR |
| 100+ | 2.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE623 NTE Electronics, Inc
Description: R-SI DUAL 200V 6A 150NS, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220, Current - Average Rectified (Io) (per Diode): 3A, Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bag.
