NTE638 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 1.6KV 2.5A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bag
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 3.53 EUR |
| 20+ | 3.36 EUR |
| 50+ | 3.17 EUR |
| 100+ | 3.09 EUR |
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Technische Details NTE638 NTE Electronics, Inc
Description: DIODE GEN PURP 1.6KV 2.5A AXIAL, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Axial, Current - Average Rectified (Io): 2.5A, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: Axial, Packaging: Bag, Current - Reverse Leakage @ Vr: 50 µA @ 1600 V.