NTF2955PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.7A SOT-223
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
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Technische Details NTF2955PT1G onsemi
Description: MOSFET P-CH 60V 1.7A SOT-223, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223 (TO-261), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Drain to Source Voltage (Vdss): 60 V, Packaging: Tape & Reel (TR).