NTF2955T1G-EV EVVO
Hersteller: EVVO
Description: MOSFET P-CH 60V 7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 12+ | 1.9 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
7 Stücke
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Technische Details NTF2955T1G-EV EVVO
Description: MOSFET P-CH 60V 7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V, Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223-3L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.
Weitere Produktangebote NTF2955T1G-EV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTF2955T1G-EV | EVVO |
Description: MOSFET P-CH 60V 7A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223-3L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTF2955T1G-EV |
|
Hersteller: EVVO
Description: MOSFET P-CH 60V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET P-CH 60V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Ta), 10.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH