NTF2955T1G onsemi
Hersteller: onsemiDescription: MOSFET P-CH 60V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.81 EUR |
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Technische Details NTF2955T1G onsemi
Description: MOSFET P-CH 60V 1.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-223 (TO-261), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V.
Weitere Produktangebote NTF2955T1G nach Preis ab 1.1 EUR bis 5.13 EUR
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NTF2955T1G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 1.7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223 (TO-261) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V |
auf Bestellung 9745 Stücke: Lieferzeit 10-14 Tag (e) |
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NTF2955T1G | Hersteller : onsemi |
MOSFET -60V 2.6A P-Channel |
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NTF2955T1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R |
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| NTF2955T1G | Hersteller : ONS |
Транз. Пол. ММ P-Channel MOSFET SOT-223 Udss=60V; Id=1,7 A; Pdmax=1 W |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTF2955T1G | Hersteller : ON-Semicoductor |
P-MOSFET 60V 1.7A 1W NTF2955T1G SOT223 TNTF2955 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTF2955T1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF2955T1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTF2955T1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 |
Produkt ist nicht verfügbar |