NTF3055-100T3G************
Hersteller:
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details NTF3055-100T3G************
Description: MOSFET N-CH 60V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V.
Weitere Produktangebote NTF3055-100T3G************
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| NTF3055-100T3G |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTF3055-100T3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF3055-100T3G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 3A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V |
Produkt ist nicht verfügbar |