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NTF5P03T3G

NTF5P03T3G onsemi

ntf5p03t3-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.41 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTF5P03T3G onsemi

Description: MOSFET P-CH 30V 3.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V.

Weitere Produktangebote NTF5P03T3G nach Preis ab 0.45 EUR bis 1.71 EUR

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NTF5P03T3G NTF5P03T3G onsemi DAC501D39A11DFAB15C15CD539FD91DB6F1608B8FB7C3C9492C089A3B8B3F59A.pdf MOSFETs 30V 5.2A P-Channel
auf Bestellung 17908 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.88 EUR
10+0.83 EUR
100+0.67 EUR
500+0.54 EUR
1000+0.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTF5P03T3G NTF5P03T3G onsemi ntf5p03t3-d.pdf Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
NTF5P03T3G DAC501D39A11DFAB15C15CD539FD91DB6F1608B8FB7C3C9492C089A3B8B3F59A.pdf
NTF5P03T3G
Hersteller: onsemi
MOSFETs 30V 5.2A P-Channel
auf Bestellung 17908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.88 EUR
10+0.83 EUR
100+0.67 EUR
500+0.54 EUR
1000+0.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTF5P03T3G ntf5p03t3-d.pdf
NTF5P03T3G
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH