NTGD3133PT1G onsemi
Hersteller: onsemiDescription: MOSFET 2P-CH 20V 1.6A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 560mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 987+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTGD3133PT1G onsemi
Description: MOSFET 2P-CH 20V 1.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 560mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.6A, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V, Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Obsolete.
Weitere Produktangebote NTGD3133PT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NTGD3133PT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTGD3133PT1G - NTGD3133PT1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NTGD3133PT1G | Hersteller : ON |
|
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||
|
|
NTGD3133PT1G | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 1.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 560mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |