Technische Details NTGD4161PT1G NO
Description: MOSFET 2P-CH 30V 1.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V, Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote NTGD4161PT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTGD4161PT1G | Hersteller : ON |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
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NTGD4161PT1G | Hersteller : ON Semiconductor |
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auf Bestellung 319 Stücke: Lieferzeit 21-28 Tag (e) |
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NTGD4161PT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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NTGD4161PT1G | Hersteller : onsemi |
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Produkt ist nicht verfügbar |