Technische Details NTGD4161PT1G NO
Description: MOSFET 2P-CH 30V 1.5A 6TSOP, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V, Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 600mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate.
Weitere Produktangebote NTGD4161PT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTGD4161PT1G | onsemi |
Description: MOSFET 2P-CH 30V 1.5A 6TSOPGate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 30V Power - Max: 600mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTGD4161PT1G | onsemi |
MOSFET PFET TSOP6 20V 2.3A 160mOhm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTGD4161PT1G |
![]() |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGD4161PT1G |
![]() |
Hersteller: onsemi
MOSFET PFET TSOP6 20V 2.3A 160mOhm
MOSFET PFET TSOP6 20V 2.3A 160mOhm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


