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NTGS3433T1G

NTGS3433T1G onsemi

ntgs3433t1-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
auf Bestellung 163782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
878+0.51 EUR
Mindestbestellmenge: 878
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTGS3433T1G onsemi

Description: MOSFET P-CH 12V 2.35A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V.

Weitere Produktangebote NTGS3433T1G nach Preis ab 0.41 EUR bis 0.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTGS3433T1G NTGS3433T1G Hersteller : onsemi NTGS3433T1_D-2318622.pdf MOSFET -12V -3.3A P-Channel
auf Bestellung 1999 Stücke:
Lieferzeit 339-343 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.74 EUR
100+0.61 EUR
500+0.51 EUR
1000+0.45 EUR
3000+0.41 EUR
Mindestbestellmenge: 4
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NTGS3433T1G ntgs3433t1-d.pdf
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
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NTGS3433T1G NTGS3433T1G Hersteller : ON Semiconductor ntgs3433t1-d.pdf Trans MOSFET P-CH 12V 3.3A 6-Pin TSOP T/R
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NTGS3433T1G NTGS3433T1G Hersteller : onsemi ntgs3433t1-d.pdf Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
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NTGS3433T1G Hersteller : ONSEMI ntgs3433t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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