NTGS3433T1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
| Anzahl | Preis |
|---|---|
| 878+ | 0.51 EUR |
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Technische Details NTGS3433T1G onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V.
Weitere Produktangebote NTGS3433T1G nach Preis ab 0.41 EUR bis 0.83 EUR
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NTGS3433T1G | Hersteller : onsemi |
MOSFET -12V -3.3A P-Channel |
auf Bestellung 1999 Stücke: Lieferzeit 339-343 Tag (e) |
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| NTGS3433T1G |
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auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
