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Technische Details NTH4L013N120M3S onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 151A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V, Power Dissipation (Max): 682W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 37mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V.
Weitere Produktangebote NTH4L013N120M3S nach Preis ab 31.83 EUR bis 52.87 EUR
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NTH4L013N120M3S | onsemi |
 Description: DISCRETE SIC M3S 1200V 13MOHMPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 151A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V Power Dissipation (Max): 682W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 37mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V |
auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L013N120M3S |
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Hersteller: onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
Description: DISCRETE SIC M3S 1200V 13MOHM
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V
Power Dissipation (Max): 682W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 37mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 52.87 EUR |
| 10+ | 38.99 EUR |
| 450+ | 31.83 EUR |