auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 48.4 EUR |
| 10+ | 42.59 EUR |
| 120+ | 38.37 EUR |
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Technische Details NTH4L013N120M3S onsemi
Description: DISCRETE SIC M3S 1200V 13MOHM, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 151A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V, Power Dissipation (Max): 682W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 37mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V.
Weitere Produktangebote NTH4L013N120M3S nach Preis ab 39.7 EUR bis 48.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTH4L013N120M3S | Hersteller : onsemi |
 Description: DISCRETE SIC M3S 1200V 13MOHMPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 151A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 75A, 18V Power Dissipation (Max): 682W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 37mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5813 pF @ 800 V |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L013N120M3S | Hersteller : ONSEMI |
Description: ONSEMI - NTH4L013N120M3S - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 151 A, 1.2 kV, 0.02 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV Dauer-Drainstrom Id: 151A hazardous: false usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 682W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTH4L013N120M3S | Hersteller : ON Semiconductor |
Discrete SiC M3S 1200V 13mohm |
Produkt ist nicht verfügbar |
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| NTH4L013N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 254nC Power dissipation: 340W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 505A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTH4L013N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 254nC Power dissipation: 340W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 505A Polarisation: unipolar |
Produkt ist nicht verfügbar |