| Anzahl | Preis |
|---|---|
| 1+ | 41.89 EUR |
| 10+ | 32.6 EUR |
| 120+ | 32.12 EUR |
| 510+ | 31.86 EUR |
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Technische Details NTH4L014N120M3P onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 127A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V, Power Dissipation (Max): 686W (Tc), Vgs(th) (Max) @ Id: 4.63V @ 37mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V.
Weitere Produktangebote NTH4L014N120M3P nach Preis ab 30.83 EUR bis 44.35 EUR
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NTH4L014N120M3P | Hersteller : onsemi |
 Description: SIC MOSFET 1200 V 14 MOHM M3P SEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V Power Dissipation (Max): 686W (Tc) Vgs(th) (Max) @ Id: 4.63V @ 37mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V |
auf Bestellung 9085 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L014N120M3P | Hersteller : ONN |
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auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH4L014N120M3P | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 107A Pulsed drain current: 407A Power dissipation: 343W Case: TO247-4 Gate-source voltage: -10...22V On-state resistance: 29mΩ Mounting: THT Gate charge: 322nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |