NTH4L014N120M3P onsemi
Hersteller: onsemiDescription: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 686W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V
auf Bestellung 9085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.35 EUR |
| 10+ | 32.5 EUR |
| 450+ | 30.83 EUR |
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Technische Details NTH4L014N120M3P onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 127A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V, Power Dissipation (Max): 686W (Tc), Vgs(th) (Max) @ Id: 4.63V @ 37mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 800 V.
Weitere Produktangebote NTH4L014N120M3P nach Preis ab 31.35 EUR bis 47.01 EUR
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NTH4L014N120M3P | Hersteller : onsemi |
MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L014N120M3P | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 127A Automotive 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTH4L014N120M3P | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 322nC Power dissipation: 343W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 407A Polarisation: unipolar |
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