NTH4L020N120SC1 ON Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 58.18 EUR |
| 10+ | 48.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTH4L020N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 102A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V, Power Dissipation (Max): 510W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V.
Weitere Produktangebote NTH4L020N120SC1 nach Preis ab 58.97 EUR bis 86.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTH4L020N120SC1 | Hersteller : onsemi |
 Description: SICFET N-CH 1200V 102A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 510W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V |
auf Bestellung 2216 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NTH4L020N120SC1 | Hersteller : onsemi |
MOSFET SIC MOS TO247-4L 20MOHM 1200V |
auf Bestellung 335 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
NTH4L020N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NTH4L020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 102 A, 1.2 kV, 0.02 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 102A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 510W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
NTH4L020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 102A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
NTH4L020N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 408A Power dissipation: 255W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
NTH4L020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 102A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
NTH4L020N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 408A Power dissipation: 255W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |