NTH4L023N065M3S onsemi
Hersteller: onsemiDescription: SIC MOS TO247-4L 23MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 46329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.2 EUR |
| 10+ | 11.93 EUR |
| 450+ | 8.28 EUR |
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Technische Details NTH4L023N065M3S onsemi
Description: SIC MOS TO247-4L 23MOHM 650V M3S, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V.
Weitere Produktangebote NTH4L023N065M3S nach Preis ab 9.64 EUR bis 17.53 EUR
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NTH4L023N065M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S |
auf Bestellung 559 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L023N065M3S | Hersteller : ONN |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH4L023N065M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 225A; 122W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Power dissipation: 122W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 37mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Pulsed drain current: 225A |
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