| Anzahl | Preis |
|---|---|
| 1+ | 28.97 EUR |
| 10+ | 21.6 EUR |
| 120+ | 21.16 EUR |
| 510+ | 20.49 EUR |
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Technische Details NTH4L025N065SC1 onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 99A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 15.5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 15 V.
Weitere Produktangebote NTH4L025N065SC1 nach Preis ab 24.01 EUR bis 33.46 EUR
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NTH4L025N065SC1 | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET - 1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 15 V |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L025N065SC1 | Hersteller : ONN |
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auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |