auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.24 EUR |
| 10+ | 27.19 EUR |
| 30+ | 27.16 EUR |
| 60+ | 27.14 EUR |
| 270+ | 24.46 EUR |
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Technische Details NTH4L027N65S3F onsemi
Description: MOSFET N-CH 650V 75A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-247-4L, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V.
Weitere Produktangebote NTH4L027N65S3F nach Preis ab 27.06 EUR bis 37.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTH4L027N65S3F | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 75A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-4L Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V |
auf Bestellung 429 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L027N65S3F | Hersteller : ON Semiconductor |
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auf Bestellung 310 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH4L027N65S3F | Hersteller : ON Semiconductor |
650 V, N Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| NTH4L027N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTH4L027N65S3F | Hersteller : ON Semiconductor |
650 V, N Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| NTH4L027N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |