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Technische Details NTH4L032N065M3S onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V.
Weitere Produktangebote NTH4L032N065M3S nach Preis ab 7.41 EUR bis 14.8 EUR
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NTH4L032N065M3S | onsemi |
 Description: SIC MOS TO247-4L 32MOHM 650V M3SPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L032N065M3S | ONN |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTH4L032N065M3S |
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Hersteller: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.8 EUR |
| 30+ | 8.74 EUR |
| 120+ | 7.41 EUR |
| NTH4L032N065M3S |
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Hersteller: ONN
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH