NTH4L040N120SC1 ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Mounting: THT
Power dissipation: 160W
Gate charge: 106nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
On-state resistance: 56mΩ
Pulsed drain current: 232A
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Technische Details NTH4L040N120SC1 ONSEMI
Description: ONSEMI - NTH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 58A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 319W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 20V, Drain-Source-Durchgangswiderstand: 0.04ohm.
Weitere Produktangebote NTH4L040N120SC1 nach Preis ab 23.56 EUR bis 43.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTH4L040N120SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V |
auf Bestellung 1387 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N120SC1 | ONSEMI |
Description: ONSEMI - NTH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247 tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 58A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 319W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.04ohm |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L040N120SC1 | onsemi |
Description: SICFET N-CH 1200V 58A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V |
auf Bestellung 6614 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 58A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTH4L040N120SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V
SiC MOSFETs SIC MOS TO247-4L 40MOHM 1200V
auf Bestellung 1387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35 EUR |
| 10+ | 26.85 EUR |
| NTH4L040N120SC1 |
|
Hersteller: ONSEMI
Description: ONSEMI - NTH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 319W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.04ohm
Description: ONSEMI - NTH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 319W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.04ohm
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 42.01 EUR |
| 7+ | 36.76 EUR |
| 10+ | 31.86 EUR |
| 50+ | 29.75 EUR |
| 100+ | 27.68 EUR |
| 250+ | 25.6 EUR |
| NTH4L040N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
auf Bestellung 6614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.4 EUR |
| 30+ | 27.51 EUR |
| 120+ | 24.04 EUR |
| 510+ | 23.56 EUR |
| NTH4L040N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 58A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 58A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 43.57 EUR |
| 10+ | 33.21 EUR |