NTH4L040N65S3F onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
auf Bestellung 4471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.24 EUR |
| 30+ | 15.83 EUR |
| 120+ | 15.1 EUR |
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Technische Details NTH4L040N65S3F onsemi
Description: MOSFET N-CH 650V 65A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.1mA, Supplier Device Package: TO-247-4L, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V.
Weitere Produktangebote NTH4L040N65S3F nach Preis ab 15.1 EUR bis 27.49 EUR
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NTH4L040N65S3F | Hersteller : onsemi |
MOSFETs FRFET 650 V 65 A 40 mOhm TO-247 |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V Pulsed drain current: 162.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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NTH4L040N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L040N65S3F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 65A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.1mA Supplier Device Package: TO-247-4L Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V |
auf Bestellung 3910 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L040N65S3F | Hersteller : ON Semiconductor |
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auf Bestellung 156 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH4L040N65S3F | Hersteller : ON Semiconductor |
650 V, 65 A, 40 m Ohm N Channel MOSFET |
Produkt ist nicht verfügbar |