NTH4L040N65S3F onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 1+ | 24.04 EUR |
| 30+ | 15.7 EUR |
| 120+ | 14.97 EUR |
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Technische Details NTH4L040N65S3F onsemi
Description: MOSFET N-CH 650V 65A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.1mA, Supplier Device Package: TO-247-4L, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V.
Weitere Produktangebote NTH4L040N65S3F nach Preis ab 14.97 EUR bis 27.37 EUR
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NTH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Pulsed drain current: 162.5A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L040N65S3F | onsemi |
Description: MOSFET N-CH 650V 65A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.1mA Supplier Device Package: TO-247-4L Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L040N65S3F | onsemi |
MOSFETs FRFET 650 V 65 A 40 mOhm TO-247 |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L040N65S3F | ON Semiconductor |
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auf Bestellung 156 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTH4L040N65S3F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.3 EUR |
| 5+ | 22.78 EUR |
| 30+ | 20.13 EUR |
| NTH4L040N65S3F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
Description: MOSFET N-CH 650V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.26 EUR |
| 30+ | 16.98 EUR |
| 120+ | 14.97 EUR |
| NTH4L040N65S3F |
|
Hersteller: onsemi
MOSFETs FRFET 650 V 65 A 40 mOhm TO-247
MOSFETs FRFET 650 V 65 A 40 mOhm TO-247
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.37 EUR |
| 10+ | 17.97 EUR |
| 120+ | 17.3 EUR |
| NTH4L040N65S3F |
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Hersteller: ON Semiconductor
auf Bestellung 156 Stücke:
Lieferzeit 21-28 Tag (e)