NTH4L070N120M3S onsemi
Hersteller: onsemiSiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.03 EUR |
| 10+ | 9.01 EUR |
| 120+ | 6.56 EUR |
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Technische Details NTH4L070N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 7mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V.
Weitere Produktangebote NTH4L070N120M3S nach Preis ab 6.34 EUR bis 14.12 EUR
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NTH4L070N120M3S | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
auf Bestellung 64213 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 34A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTH4L070N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
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| NTH4L070N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 98A; 80W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 98A Power dissipation: 80W Case: TO247-4 Gate-source voltage: -10...22V On-state resistance: 136mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |