NTH4L080N120SC1 onsemi
Hersteller: onsemiDescription: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
auf Bestellung 117430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.69 EUR |
| 30+ | 18.64 EUR |
| 120+ | 16.68 EUR |
| 510+ | 14.72 EUR |
| 1020+ | 13.25 EUR |
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Technische Details NTH4L080N120SC1 onsemi
Description: SICFET N-CH 1200V 29A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V.
Weitere Produktangebote NTH4L080N120SC1 nach Preis ab 14.44 EUR bis 24.93 EUR
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NTH4L080N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 21A Pulsed drain current: 125A Power dissipation: 28W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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NTH4L080N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 21A Pulsed drain current: 125A Power dissipation: 28W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L080N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 50.4A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L080N120SC1 | Hersteller : onsemi |
MOSFET SIC MOS TO247-4L 80MOHM 1200V |
auf Bestellung 420 Stücke: Lieferzeit 14-28 Tag (e) |
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NTH4L080N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NTH4L080N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 29 A, 1.2 kV, 0.08 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.75V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L080N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 50.4A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L080N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 50.4A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |