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Technische Details NTH4L160N120SC1 onsemi
Description: SICFET N-CH 1200V 17.3A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V.
Weitere Produktangebote NTH4L160N120SC1 nach Preis ab 6.66 EUR bis 15.65 EUR
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NTH4L160N120SC1 | onsemi |
 Description: SICFET N-CH 1200V 17.3A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
auf Bestellung 3341 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTH4L160N120SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
auf Bestellung 3341 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.65 EUR |
| 30+ | 9.23 EUR |
| 120+ | 7.82 EUR |
| 510+ | 6.79 EUR |
| 1020+ | 6.66 EUR |