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NTHC5513T1 ON


nthc5513-d.pdf Hersteller: ON
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Technische Details NTHC5513T1 ON

Description: MOSFET N/P-CH 20V CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Obsolete.

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NTHC5513T1 NTHC5513T1 Hersteller : onsemi nthc5513-d.pdf Description: MOSFET N/P-CH 20V CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
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