Technische Details NTHC5513T1 ON
Description: MOSFET N/P-CH 20V CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Obsolete.
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NTHC5513T1 | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
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