Technische Details NTHD2102PT1G ON
Description: MOSFET 2P-CH 8V 3.4A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V, Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: ChipFET™.
Weitere Produktangebote NTHD2102PT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NTHD2102PT1G | Hersteller : ON |
 09+ |
auf Bestellung 2210 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHD2102PT1G | Hersteller : ON |
SOT23-8 |
auf Bestellung 13810 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD2102PT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 8V 3.4A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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NTHD2102PT1G | Hersteller : onsemi |
Description: MOSFET 2P-CH 8V 3.4A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ |
Produkt ist nicht verfügbar |
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NTHD2102PT1G | Hersteller : onsemi |
MOSFET -8V -4.6A P-Channel |
Produkt ist nicht verfügbar |