NTHD3102CT1G onsemi
Hersteller: onsemiDescription: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.7 EUR |
| 6000+ | 0.67 EUR |
| 9000+ | 0.64 EUR |
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Technische Details NTHD3102CT1G onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Active.
Weitere Produktangebote NTHD3102CT1G nach Preis ab 0.66 EUR bis 1.71 EUR
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NTHD3102CT1G | Hersteller : onsemi |
MOSFET 20V 5.5A/-4.2A Complementary |
auf Bestellung 50740 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD3102CT1G | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 4A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 66005 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 138000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD3102CT1G | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| NTHD3102CT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 5.5/-4.2A Pulsed drain current: 16A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTHD3102CT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 5.5/-4.2A Pulsed drain current: 16A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |