| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.87 EUR |
| 3000+ | 0.82 EUR |
| 6000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHD3102CT1G onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Active.
Weitere Produktangebote NTHD3102CT1G nach Preis ab 0.42 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTHD3102CT1G | onsemi |
Description: MOSFET N/P-CH 20V 4A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NTHD3102CT1G | ON Semiconductor |
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHD3102CT1G |
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auf Bestellung 138000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTHD3102CT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| NTHD3102CT1G |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 180+ | 0.99 EUR |
| 212+ | 0.8 EUR |
| 216+ | 0.76 EUR |
| 292+ | 0.54 EUR |
| 302+ | 0.5 EUR |
| 500+ | 0.42 EUR |
| NTHD3102CT1G |
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auf Bestellung 138000 Stücke:
Lieferzeit 21-28 Tag (e)


