auf Bestellung 50740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.67 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.90 EUR |
| 1000+ | 0.73 EUR |
| 3000+ | 0.69 EUR |
| 6000+ | 0.66 EUR |
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Produktbewertung abgeben
Technische Details NTHD3102CT1G onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Part Status: Active.
Weitere Produktangebote NTHD3102CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTHD3102CT1G | Hersteller : onsemi |
 Description: MOSFET N/P-CH 20V 4A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 138000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD3102CT1G | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| NTHD3102CT1G | Hersteller : ONSEMI |
NTHD3102CT1G Multi channel transistors |
Produkt ist nicht verfügbar |
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NTHD3102CT1G | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 4A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
Produkt ist nicht verfügbar |