auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.36 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.37 EUR |
Produktrezensionen
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Technische Details NTHD4502NT1G onsemi
Description: MOSFET 2N-CH 30V 2.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 640mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.2A, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: ChipFET™.
Weitere Produktangebote NTHD4502NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTHD4502NT1G |
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auf Bestellung 31450 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHD4502NT1G | Hersteller : ONSEMI |
NTHD4502NT1G Multi channel transistors |
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NTHD4502NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 2.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 640mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: ChipFET™ |
Produkt ist nicht verfügbar |
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NTHD4502NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 2.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 640mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: ChipFET™ |
Produkt ist nicht verfügbar |