Weitere Produktangebote NTHD4508NT1G nach Preis ab 0.57 EUR bis 1.97 EUR
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NTHD4508NT1G | Hersteller : onsemi |
 Description: MOSFET 2N-CH 20V 3A CHIPFETPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ |
auf Bestellung 17635 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4508NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R |
auf Bestellung 2328 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4508NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R |
auf Bestellung 2345 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4508NT1G | Hersteller : onsemi |
MOSFET 20V 4.1A Dual N-Channel |
auf Bestellung 16499 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4508NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTHD4508NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.06 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 2.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: ChipFET Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.06ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4508NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4508NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
Produkt ist nicht verfügbar |
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NTHD4508NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
Produkt ist nicht verfügbar |