| Anzahl | Preis |
|---|---|
| 2+ | 2.6 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.15 EUR |
| 3000+ | 1.06 EUR |
| 6000+ | 1.03 EUR |
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Technische Details NTHD4P02FT1G onsemi
Description: MOSFET P-CH 20V 2.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj), Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Tj), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.
Weitere Produktangebote NTHD4P02FT1G nach Preis ab 1.05 EUR bis 3.29 EUR
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NTHD4P02FT1G | Hersteller : onsemi |
 Description: MOSFET P-CH 20V 2.2A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 1720 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHD4P02FT1G | Hersteller : ON |
SOT23-8 |
auf Bestellung 9678 Stücke: Lieferzeit 21-28 Tag (e) |