
NTHD4P02FT1G ON Semiconductor

Trans MOSFET -20V, -3A, Single P-Channel with 3A Schottky Barrier Diode 8-Pin
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
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Technische Details NTHD4P02FT1G ON Semiconductor
Description: MOSFET P-CH 20V 2.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj), Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Tj), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.
Weitere Produktangebote NTHD4P02FT1G nach Preis ab 0.29 EUR bis 2.89 EUR
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NTHD4P02FT1G | Hersteller : ON Semiconductor |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD4P02FT1G | Hersteller : onsemi |
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auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4P02FT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 2.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 2872 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON | 05NOPB |
auf Bestellung 2957 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON | 09+ |
auf Bestellung 1788 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON | SOT23-8 |
auf Bestellung 9678 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON Semiconductor |
auf Bestellung 780 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD4P02FT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTHD4P02FT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 2.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
Produkt ist nicht verfügbar |