
NTHD5903T1G onsemi

Description: MOSFET 2P-CH 20V 2.2A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: ChipFET™
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1025+ | 0.46 EUR |
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Technische Details NTHD5903T1G onsemi
Description: MOSFET 2P-CH 20V 2.2A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.2A, Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 600mV @ 250µA, Supplier Device Package: ChipFET™.
Weitere Produktangebote NTHD5903T1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTHD5903T1G |
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auf Bestellung 341 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD5903T1G | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD5903T1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTHD5903T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: ChipFET™ |
Produkt ist nicht verfügbar |