
NTHD5904NT1G onsemi

Description: MOSFET N-CH 20V 2.5A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 640mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 16 V
auf Bestellung 3663 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1211+ | 0.39 EUR |
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Technische Details NTHD5904NT1G onsemi
Description: MOSFET N-CH 20V 2.5A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V, Power Dissipation (Max): 640mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 16 V.
Weitere Produktangebote NTHD5904NT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTHD5904NT1G | Hersteller : ON |
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auf Bestellung 1300 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD5904NT1G | Hersteller : ON |
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auf Bestellung 1300 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHD5904NT1G | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3663 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD5904NT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V Power Dissipation (Max): 640mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 16 V |
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