NTHL020N090SC1 onsemi
Hersteller: onsemi
Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
auf Bestellung 1611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 44.58 EUR |
120+ | 43.32 EUR |
510+ | 36.96 EUR |
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Technische Details NTHL020N090SC1 onsemi
Description: SICFET N-CH 900V 118A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V, Power Dissipation (Max): 503W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V.
Weitere Produktangebote NTHL020N090SC1 nach Preis ab 65.29 EUR bis 93.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NTHL020N090SC1 | Hersteller : onsemi | MOSFET 20MOHM 900V |
auf Bestellung 98 Stücke: Lieferzeit 14-28 Tag (e) |
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NTHL020N090SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NTHL020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 118 A, 900 V, 0.02 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 118A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 503W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 1137 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL020N090SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH SiC 900V 118A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL020N090SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH SiC 900V 118A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL020N090SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH SiC 900V 118A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL020N090SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 427A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTHL020N090SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 427A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |