NTHL022N120M3S ON Semiconductor
auf Bestellung 11250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 450+ | 15.5 EUR |
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Technische Details NTHL022N120M3S ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET ELI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 352W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V.
Weitere Produktangebote NTHL022N120M3S nach Preis ab 14.52 EUR bis 28.55 EUR
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NTHL022N120M3S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL022N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL022N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL022N120M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS TO247-3L 22MOHM 1200V M3 |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL022N120M3S | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET ELI Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 352W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL022N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L |
Produkt ist nicht verfügbar |
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| NTHL022N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W Type of transistor: N-MOSFET Power dissipation: 174W Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: SiC Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 137nC On-state resistance: 44mΩ Drain current: 62A Pulsed drain current: 275A Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |