Technische Details NTHL022N120M3S ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET ELI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 352W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V.
Weitere Produktangebote NTHL022N120M3S nach Preis ab 17.9 EUR bis 34.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTHL022N120M3S | ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
NTHL022N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
NTHL022N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
NTHL022N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET ELI Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 352W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
NTHL022N120M3S | onsemi |
SiC MOSFETs SIC MOS TO247-3L 22MOHM 1200V M3 |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| NTHL022N120M3S | ONN |
|
auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTHL022N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 23.2 EUR |
| NTHL022N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 23.2 EUR |
| 10+ | 18.97 EUR |
| 30+ | 17.9 EUR |
| NTHL022N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 89A Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 26.61 EUR |
| NTHL022N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 352W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 800 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.97 EUR |
| 10+ | 25.11 EUR |
| NTHL022N120M3S |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 22MOHM 1200V M3
SiC MOSFETs SIC MOS TO247-3L 22MOHM 1200V M3
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.5 EUR |
| 10+ | 25.38 EUR |
| 120+ | 22.21 EUR |
| NTHL022N120M3S |
|
Hersteller: ONN
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)