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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.25 EUR |
| 10+ | 10.33 EUR |
| 100+ | 9.47 EUR |
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Technische Details NTHL023N065M3S onsemi
Description: SIC MOS TO247-3L 23MOHM 650V M3S, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67.9A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 18V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 2.62V @ 10mA, Supplier Device Package: TO-247-3LD, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70.1 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1782 pF @ 400 V.
Weitere Produktangebote NTHL023N065M3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTHL023N065M3S | Hersteller : onsemi |
 Description: SIC MOS TO247-3L 23MOHM 650V M3SPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67.9A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 18V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 2.62V @ 10mA Supplier Device Package: TO-247-3LD Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70.1 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1782 pF @ 400 V |
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