NTHL030N120M3S onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.89 EUR |
| 120+ | 30.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHL030N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V.
Weitere Produktangebote NTHL030N120M3S nach Preis ab 18.02 EUR bis 47.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTHL030N120M3S | Hersteller : onsemi |
 MOSFET SIC MOS TO247-3L 30MOHM 1200V M3 |
auf Bestellung 405 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| NTHL030N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 73A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| NTHL030N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 73A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| NTHL030N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 73A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| NTHL030N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 73A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |