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NTHL060N090SC1

NTHL060N090SC1 onsemi

nthl060n090sc1-d.pdf
Hersteller: onsemi
Description: SICFET N-CH 900V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
auf Bestellung 23413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.48 EUR
30+11.75 EUR
120+10.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTHL060N090SC1 onsemi

Description: SICFET N-CH 900V 46A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V.

Weitere Produktangebote NTHL060N090SC1 nach Preis ab 11.69 EUR bis 20.03 EUR

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NTHL060N090SC1 NTHL060N090SC1 Hersteller : onsemi nthl060n090sc1-d.pdf SiC MOSFETs 60MOHM 900V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.03 EUR
10+13.18 EUR
120+11.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH