Technische Details NTHL060N090SC1 ON Semiconductor
Description: ONSEMI - NTHL060N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 46 A, 900 V, 0.06 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 900V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 46A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.7V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 221W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 15V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.06ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote NTHL060N090SC1 nach Preis ab 11.52 EUR bis 25.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NTHL060N090SC1 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W Case: TO247-3 Mounting: THT Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -10...20V Kind of package: tube On-state resistance: 60mΩ Pulsed drain current: 184A Power dissipation: 110W Gate charge: 87nC Polarisation: unipolar Technology: SiC Drain current: 32A Kind of channel: enhancement |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL060N090SC1 | onsemi |
SiC MOSFETs 60MOHM 900V |
auf Bestellung 1078 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL060N090SC1 | onsemi |
Description: SICFET N-CH 900V 46A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V |
auf Bestellung 23413 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL060N090SC1 | ONSEMI |
Description: ONSEMI - NTHL060N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 46 A, 900 V, 0.06 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 46A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 221W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 609 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL060N090SC1 | Aptina Imaging |
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL060N090SC1 | Aptina Imaging |
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL060N090SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Case: TO247-3
Mounting: THT
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -10...20V
Kind of package: tube
On-state resistance: 60mΩ
Pulsed drain current: 184A
Power dissipation: 110W
Gate charge: 87nC
Polarisation: unipolar
Technology: SiC
Drain current: 32A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Case: TO247-3
Mounting: THT
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -10...20V
Kind of package: tube
On-state resistance: 60mΩ
Pulsed drain current: 184A
Power dissipation: 110W
Gate charge: 87nC
Polarisation: unipolar
Technology: SiC
Drain current: 32A
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.41 EUR |
| NTHL060N090SC1 |
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Hersteller: onsemi
SiC MOSFETs 60MOHM 900V
SiC MOSFETs 60MOHM 900V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.75 EUR |
| 10+ | 15.37 EUR |
| NTHL060N090SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 900V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
Description: SICFET N-CH 900V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
auf Bestellung 23413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.99 EUR |
| 30+ | 13.98 EUR |
| 120+ | 12.54 EUR |
| NTHL060N090SC1 |
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Hersteller: ONSEMI
Description: ONSEMI - NTHL060N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 46 A, 900 V, 0.06 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 221W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - NTHL060N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 46 A, 900 V, 0.06 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 46A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 221W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 25.39 EUR |
| 11+ | 20.52 EUR |
| 50+ | 15.02 EUR |
| 100+ | 14.65 EUR |
| 250+ | 14.27 EUR |
| NTHL060N090SC1 |
|
Hersteller: Aptina Imaging
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.52 EUR |
| NTHL060N090SC1 |
|
Hersteller: Aptina Imaging
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 16.16 EUR |
| 100+ | 15.28 EUR |