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NTHL061N60S5H

NTHL061N60S5H onsemi

NTHL061N60S5H-D.PDF Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4.4mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 73.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4156 pF @ 400 V
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Technische Details NTHL061N60S5H onsemi

Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 4.4mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 73.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4156 pF @ 400 V.