NTHL075N065SC1 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.61 EUR |
| 18+ | 9.65 EUR |
| 30+ | 7.68 EUR |
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Technische Details NTHL075N065SC1 ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V.
Weitere Produktangebote NTHL075N065SC1 nach Preis ab 8.31 EUR bis 19.29 EUR
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NTHL075N065SC1 | onsemi |
 SiC MOSFETs SIC MOS TO247-3L 650V |
auf Bestellung 641 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL075N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL075N065SC1 | Aptina Imaging |
Silicon Carbide (SiC) MOSFET |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL075N065SC1 | Aptina Imaging |
Silicon Carbide (SiC) MOSFET |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NTHL075N065SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 650V
SiC MOSFETs SIC MOS TO247-3L 650V
auf Bestellung 641 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.9 EUR |
| 10+ | 10.77 EUR |
| NTHL075N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.29 EUR |
| 30+ | 11.42 EUR |
| 120+ | 9.69 EUR |
| 510+ | 8.43 EUR |
| 1020+ | 8.31 EUR |
| NTHL075N065SC1 |
|
Hersteller: Aptina Imaging
Silicon Carbide (SiC) MOSFET
Silicon Carbide (SiC) MOSFET
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 11.1 EUR |
| NTHL075N065SC1 |
|
Hersteller: Aptina Imaging
Silicon Carbide (SiC) MOSFET
Silicon Carbide (SiC) MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.61 EUR |