NTHL075N065SC1 onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
auf Bestellung 5730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.48 EUR |
30+ | 11.55 EUR |
120+ | 10.34 EUR |
510+ | 9.12 EUR |
1020+ | 8.21 EUR |
2010+ | 7.69 EUR |
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Technische Details NTHL075N065SC1 onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V.
Weitere Produktangebote NTHL075N065SC1 nach Preis ab 8.27 EUR bis 21.55 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NTHL075N065SC1 | Hersteller : onsemi | MOSFET SIC MOS TO247-3L 650V |
auf Bestellung 449 Stücke: Lieferzeit 14-28 Tag (e) |
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NTHL075N065SC1 | Hersteller : ON Semiconductor | Silicon Carbide (SiC) MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL075N065SC1 | Hersteller : ON Semiconductor | Silicon Carbide (SiC) MOSFET |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL075N065SC1 | Hersteller : ON Semiconductor | Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
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NTHL075N065SC1 | Hersteller : ON Semiconductor | Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
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NTHL075N065SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |