NTHL075N065SC1 ON Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.76 EUR |
| 18+ | 8.11 EUR |
| 30+ | 6.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHL075N065SC1 ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V.
Weitere Produktangebote NTHL075N065SC1 nach Preis ab 7.52 EUR bis 16.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTHL075N065SC1 | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET - EPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V |
auf Bestellung 3430 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NTHL075N065SC1 | Hersteller : onsemi |
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247?3L |
auf Bestellung 753 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| NTHL075N065SC1 | Hersteller : Aptina Imaging |
Silicon Carbide (SiC) MOSFET |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
| NTHL075N065SC1 | Hersteller : Aptina Imaging |
Silicon Carbide (SiC) MOSFET |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
|
|
NTHL075N065SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 650V 38A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
| NTHL075N065SC1 | Hersteller : ON Semiconductor |
Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
 |
NTHL075N065SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
NTHL075N065SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |