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Technische Details NTHL080N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 44A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -15V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.3V @ 5mA, Power Dissipation (Max): 348W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote NTHL080N120SC1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTHL080N120SC1 | Hersteller : ONN |
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auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
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NTHL080N120SC1 | Hersteller : onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -15V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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