NTHL080N120SC1 ON Semiconductor

Description: SICFET N-CH 1200V 44A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -15V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.3V @ 5mA, Power Dissipation (Max): 348W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.