Technische Details NTHL080N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 44A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V.
Weitere Produktangebote NTHL080N120SC1
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NTHL080N120SC1 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 44A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL080N120SC1 | Hersteller : onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V |
Produkt ist nicht verfügbar |
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NTHL080N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Pulsed drain current: 136A Power dissipation: 58W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
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