auf Bestellung 2683 Stücke:
Lieferzeit 1211-1225 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.23 EUR |
| 10+ | 20.75 EUR |
| 30+ | 18.82 EUR |
| 120+ | 17.29 EUR |
| 270+ | 16.28 EUR |
| 510+ | 15.26 EUR |
| 1020+ | 13.73 EUR |
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Technische Details NTHL082N65S3F onsemi
Description: MOSFET N-CH 650V 40A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V.
Weitere Produktangebote NTHL082N65S3F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTHL082N65S3F | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 650V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL082N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL082N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NTHL082N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 25.5A On-state resistance: 82mΩ Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Gate charge: 81nC Technology: SuperFET® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Case: TO247 Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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NTHL082N65S3F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V |
Produkt ist nicht verfügbar |
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| NTHL082N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 25.5A On-state resistance: 82mΩ Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Gate charge: 81nC Technology: SuperFET® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 100A Case: TO247 |
Produkt ist nicht verfügbar |