NTHL099N60S5 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTHL099N60S5 - Leistungs-MOSFET, n-Kanal, 600 V, 33 A, 0.0792 ohm, TO-247LL, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 33A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 184W
Bauform - Transistor: TO-247LL
Anzahl der Pins: 3Pin(s)
Produktpalette: SUPERFET V
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0792ohm
SVHC: Lead (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 14.57 EUR |
| 25+ | 9.47 EUR |
| 100+ | 8.06 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
18 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHL099N60S5 ONSEMI
Description: ONSEMI - NTHL099N60S5 - Leistungs-MOSFET, n-Kanal, 600 V, 33 A, 0.0792 ohm, TO-247LL, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 33A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 184W, Bauform - Transistor: TO-247LL, Anzahl der Pins: 3Pin(s), Produktpalette: SUPERFET V, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0792ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote NTHL099N60S5 nach Preis ab 7.72 EUR bis 15.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NTHL099N60S5 | onsemi |
Description: NTHL099N60S5 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL099N60S5 |
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Hersteller: onsemi
Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
Description: NTHL099N60S5
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 13.5A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 400 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.76 EUR |
| 30+ | 9.16 EUR |
| 60+ | 8.38 EUR |
| 120+ | 7.72 EUR |